By I. J. McColm (auth.), R. A. Terpstra, P. P. A. C. Pex, A. H. de Vries (eds.)
Ceramic Processing is the 1st accomplished, stand on my own, multi-authored ebook on complicated ceramic processing. It offers an outline of the real processing steps interested in the fabrication of complicated ceramics for structural and practical applications.
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Silicon deposition does not occur at lOs Pa pure SiCI4 • with the chlorinated silanes the deposition efficiency reduces with increasing chlorine content. It can be calculated that when using SiH 2 CI 2 , silicon can be formed with an efficiency of about 46% which reduces at a temperature around 1400K to 27%. Above a temperature of 2900K the deposition efficiency of SiH 2 Cl 2 reduces to zero. The calculations with SOLGASMIX reveal the maximum efficiency for the formation of silicon from SiHCl 3 to be about 20% at temperatures up to 1300 K and to decrease to zero when the temperature increased to 1500 K.
Can the prices be reduced considerably? 17 shows that in the case of whisker manufacture, increase in the pre-conversion materials price increases the whisker cost no matter which of three possible manufacture processes are used. However, if both the production volume and the whisker yield in the modified Acheson process was improved, whisker costs could be brought below £50 kg - 1 making them candidates for several important industrial sectors. The parallel is with the cost of early silicon chips compared with current prices.
From the mixtures of SiHCI 3-NH 3 and SiCI 4-NH 3 with ratios 1:2, little or no deposition of silicon occurs thermodynamically at atmospheric pressure. The temperature reached in a laser-CVP reactor is determined by the amount of energy absorbed from the laser radiation. With the use of a stable sensitizer, the amount of energy absorbed is thus especially independent ofthe reactants used. The laser heated process is, therefore, more an energy-regulated process than a temperature-regulated process.
Ceramic Processing by I. J. McColm (auth.), R. A. Terpstra, P. P. A. C. Pex, A. H. de Vries (eds.)