By H. Hotop (auth.), Loucas G. Christophorou, James K. Olthoff (eds.)
Gaseous Dielectrics IX covers fresh advances and advancements in a variety of simple, utilized, and commercial components of gaseous dielectrics.
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1985,J. Phys. , 19901, A survey ofrecent research on ion transport in SF6, in Nonequilibrium Effects in Ion and Electron Transport, J. W. , Plenum Press, pp. , 1990b, J. Phys. , 1991, J. Phys. , 1992, J. Phys. , 1996, Int. J. Mass Spectrom. , 1997, J. Phys. , Aniaga C. , 1999, J. Phys. , 1976, J. Chem. , 65:5028 Ellis H. , Pai R. , McDaniel E. A, 1976, Atom. Data NucL Data Tables, 17:177 Ellis H. A, 1978, Atom. Data Nucl. , 12:179 Ellis H. , 1984,Atom. Data Nucl. , 31: 113 Fleming I. , and Rees J.
For clarity, the electron transit Te and the ionic current contribution Ii are indicated. Increased ionization as evidenced by the initial rise of the current prior to Te and delayed ionization as evidenced by the long tail in the current waveform following Te appear in dilute C 2FJAr mixtures «5% C2F4) from indirect Penning ionization. As the concentration ofC 2F4 reaches 5%, the degree of ionization decreases and the long tail disappears, indicating that the relative significance of Penning ionization lessens in comparison to the more dilute mixtures.
1. (a-lJ)IN(EIN)for C2F4 Figure 2(a) shows the measured values of the density-reduced effective ionization coefficient (a-ll)lN as a function of EINfor 100% C 2F4. The solid line shown in Fig. 2(a) is a least squares fit to the measured data. The data in Fig. 2(a) show that the limiting value, (EIN)lim, of EIN [value of EIN at which (a-ll)/N ~ 0] for this gas is -130xlO- 17 V cmz. This value is shown in Fig. 2(a) by the vertical arrow. The negative values of (all)1N at lower EIN can be attributed to attachment to CzF 4 or perhaps to a strongly attaching impurity.
Gaseous Dielectrics IX by H. Hotop (auth.), Loucas G. Christophorou, James K. Olthoff (eds.)