By I. Banno (auth.), Professor Dr. Motoichi Ohtsu (eds.)
Novel units and Atom Manipulation, the second one and concluding quantity of Progress in Nano-Electro-Optics, makes a speciality of functions to novel units and atom manipulation. each one bankruptcy is written through a number one scientists within the box. half II addresses the most recent advancements in nano-optical strategies, facing themes corresponding to: the explanations that the answer of nano-electro-optical innovations expand past the diffraction restrict; functions of excitonic polaritons to opto-electronic units; instrumentation of near-field optical microscopy to review quantum restricted platforms; and atom manipulation by way of optical near-field recommendations. including quantity I (Basics and idea of Near-Field Optics), those overviews are a useful source for engineers and scientists operating within the box of nano-electro-optics
Read or Download Progress in Nano-Electro-Optics II: Novel Devices and Atom Manipulation PDF
Best nonfiction_7 books
During this quantity a survey of the main proper nonlinear crack versions is equipped, with the aim of studying the nonlinear mechanical results taking place on the tip of macrocracks in quasi-brittle fabrics - comparable to concrete, rocks, ceramics, polymers, high-strength metal alloys - and in brittle-matrix fibre-reinforced composites.
- QCD at hadron colliders and in Ultra High Energy Cosmic Rays
- Improve your math : problem solving made simple for middle school math
- Basic Principles and Applications
- Lewis guns : the metamorphic MG : a guide to the changing apperance of the well-used aircraft weapon of WWI
- Advances in Computational Intelligence
Extra info for Progress in Nano-Electro-Optics II: Novel Devices and Atom Manipulation
Quantum theory on the basis of the dual EM potential. 7 Theoretical Formula for Intensity of Far Field, Near Field and Signal in NOM Here we discuss theoretical formulas for far-field intensity and near-field intensity of an arbitrary scalar or vector field. Additional consideration is needed for a theoretical formula for the signal intensity in NOM [14,15]. 1 Field Intensity for Far IN ear Field As a general starting point, the definition of the field intensity of an arbitrary scalar or vector field X (r) is LlI(r) = IX(O)(r) + LlX(r)12 -IX(O)(r)j2 IX(O)(r)1 2 X(O)*(r) .
49) The term carrying O(1/r 2 ) in (48) couples with the monopole moment of the the magnetic current density; the monopole moment vanishes because of (45) (see footnote on p. 30). Therefore this term does not contribute to the field. After all, under the NFC, the contributions to the electric field from the boundary effect and that from the retardation effect are estimated as the 2nd term in (46) "" 0 (a 3 r3 E1 - EO) EO 3 the 3rd term in (46) "" 0 (ka a E1 r3 , - EO) EO On the other hand, under Rayleigh's far-field condition ka « 1 « kr, the 2nd term in the last expression in (47) is dominant and estimated as (50) Ignoring the 1st term due to the absence of the monopole moment in the magnetic current density (see (45) and its footnote), one obtains the 2nd term in (46) "" O((ka)2~ E1 r the 3rd term in (46) "" O((ka)3~ E1 r - EO) , EO - EO) • EO The above results are summarized in Table 3.
In Fig. 10, there are the intensity profiles only under a = 0 and a = 1 but those under the other as are the same. As a result, the numerical calculation based on the boundary scattering formulation with the dual EM potential have been performed successfully. Although we do not check the case that a is a function on the boundary, we expect that an adequate function a( s) is also useful to improve the convergence in a numerical calculation. 5 ), see Fig. 10. This asymmetric profile is different from the symmetric one in Fig.
Progress in Nano-Electro-Optics II: Novel Devices and Atom Manipulation by I. Banno (auth.), Professor Dr. Motoichi Ohtsu (eds.)