By O. Madelung (auth.), O. Madelung (eds.)

ISBN-10: 3540531505

ISBN-13: 9783540531500

ISBN-10: 3642456812

ISBN-13: 9783642456817

The widespread use of renowned serious facts handbooks like Beilstein, Gmelin and Landolt­ Bornstein is impeded by means of the truth that purely better libraries - frequently far-off from the scientist's operating position - can come up with the money for such invaluable collections. to meet an pressing desire of many scientists for having at their operating position a complete, top of the range, yet affordable choice of a minimum of the elemental info oftheirfield of curiosity the sequence "Data in technological know-how and Technology"is all started now. this primary quantity offers crucial facts on teams of semiconductors, the weather of the IVth workforce of the periodic approach and the III-V compounds. All facts have been compiled from details on approximately 2500 pages in a variety of volumes of the recent sequence of Landolt-Bornstein. for every severely selected information set and every determine the unique literature is stated. furthermore, tables of content material consult with the handbooks the knowledge have been drawn from. hence the presentation of information during this quantity is of an analogous top of the range typical as within the unique evaluated info collections. we are hoping to fulfill the wishes of the actual neighborhood with the volumes of the sequence "Data in technology and Technology", forming bridges among the laboratory and extra info assets within the libraries.

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Conf. on Defects in Semiconductors, Budapest 1988, Ferency, G. ), Trans. Tech. Publ. 1988. : J. Electrochem. Soc. 136 (1989) 1142. Physical property Numerical value Experimental conditions Experimental method, remarks Ref. 3 Germanium (Ge) Electronic properties band structure: Fig. 1 (Brillouin zone, see Fig. 1). The conduction band is characterized by eight equivalent minima at the end points of the [111]-axes of the Brillouin zone (symmetry L6)' The surfaces of constant energy are ellipsoids of revolution with major axes along [111].

Rev. B27 (1983) 7466. : Aggregation Phenomena of Point Defects in Si, Sirtl, E. ), The Electrochem. Soc. 1983, p. 155. : J. Appl. Phys. 54 (1983) 3612. : 1. Phys. C16 (1983) 6731. : Aggregation Phenomena of Point Defects in Si, Sirtl, E. ), The Electrochem Soc. 1983, p. 189. : J. Appl. Phys. 54 (1983) 752. : Appl. Phys. Lett. 43 (1983) 485. : Phys. Rev. B28 (1983) 5943. : Phys. Rev. B27 (1983) 2605. C: Solid State Commun. 48 (1983) 995. : Appl. Phys. A30 (1983) 1. : Silicon calculator 1983. : Solid State Commun.

Phys. Rev. 836 (1987) 9392. : Appl. Phys. A43 (1987) 153. : Proc. 5th Int. School ISPPME 1987. : J. Phys. D20 (1987) 1148. : Appl. Phys. Lett. 50 (1987) 1086. : 1. Electrochem. Soc. 134 (1987) 1508. : private communication. : 15. Int. Conf. Defects in Semiconductors Budapest 1988. : Appl. Phys. A46 (1988) 159. : Proc. 15th Int. Conf. on Defects in Semiconductors, Budapest 1988, Trans. Tech. Publ. 1988. : Proc. 15th Int. Conf. on Defects in Semiconductors, Budapest 1988, Ferency, G. ), Trans. Tech.

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Semiconductors: Group IV Elements and III-V Compounds by O. Madelung (auth.), O. Madelung (eds.)

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